TcSUH Special Seminars
Friday, August 14, 2009
Interfacial Behavior of Highly Epitaxial Ferroelectric (Pb,Sr)TiO3 Thin Films
Dr. Yuan Lin
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, China 610054
Room 102, University of Houston Science Center
11:00 AM - 12:00 PM
Summary/Abstract
(Pb,Sr)TiO3 thin films have shown great potential in high frequency room temperature microwave elements due to their excellent properties such as large tunability and low dielectric loss. Interfacial properties have been considered to be related closely with the dielectric properties of these films. To fully understand the growth mechanism for achieving high quality epitaxial films with optimized physical properties, systematical study on the interfacial behavior is critical and important. We have investigated the strain states, dislocation density and strain distribution near the interface of epitaxial (Pb,Sr)TiO3 thin films on NdGaO3, LaAlO3, and MgO substrates, by using high-resolution X-ray diffraction. Dielectric properties of the films have been measured and demonstrate strong correlation with the interfacial properties such as strain and dislocation densities. Details about the interfacial behavior and strain relaxation will be discussed.
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